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NE722S01 - NECs C TO X BAND N-CHANNEL GaAs MES FET

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General Description

NEC's NE722S01 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band.

Overview

NEC's C TO X BAND N-CHANNEL GaAs MES FET NE722S01.

Key Features

  • HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz.
  • OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz.
  • LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz.
  • GATE LENGTH: LG = 0.8 µm (recessed gate).
  • GATE WIDTH: WG = 400 µm 2.

More Datasheets from NEC (now Renesas Electronics)

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NE71383B L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
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