NE722S01 fet equivalent, necs c to x band n-channel gaas mes fet.
* HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz
* OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz
* LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 d.
through X-band. The device features a 0.8 micron recessed gate, triple epitaxial technology and is fabricated using ion .
NEC's NE722S01 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band. The device features a 0.8 micron recessed gate, triple epitaxial technology and is fabricated using ion implantation for improved RF and .
Image gallery
Download