* Class A operation
* High power output
* High reliability 110 100 100 240 PHYSICAL DIMENSIONS NE8500200 (CHIP) (unit: µm) 640 100 90 1800 100 SELECTION .

9 0.846 0.843 0.834 0.814 0.773 0.740 0.730 0.747 0.741 0.718 0.712 S22 ANG
  –155.9
  –172..

The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in.

NE85002

NE8500295-4

NE8500295-6

NE8500295-8

NE85001

NE8500100

NE8500199

NE850R599A

NE851M03

NE851M13

NE851M33

NE856

NE85600

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