NE85001 Datasheet (NEC) - 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

NE85001, 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on.

NE8500100 is the two-cells recessed gate chip used in ‘99’ package.

The device incorporates Ti-Al gate and silicon dioxide glassivation.

To reduce the thermal resistance,

NE85001 Features

* Class A operation

* High power output

* High reliability PHYSICAL DIMENSIONS NE8500100 (CHIP) (unit: µm) 65 170 146 SELECTION CHART 100 PERFORMANCE SPECIFIED PART NUMBER FORM Pout (

* ) (dBm) GL (

* ) (dB) USABLE FREQUENCY (GHz) 2.0 to 10 100 100 780 640