NE85633 Datasheet, Transistor, Renesas

✔ NE85633 Features

Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

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NE85633

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📄 Datasheet

Description:

Npn silicon rf transistor.

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California Eastern Laboratories (CEL)

RF TRANS NPN 12V 7GHZ SOT-23-3

DigiKey

NE85633-R23-A

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NE85633 NPN Silicon Transistor Renesas