Datasheet4U Logo Datasheet4U.com

NE856 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

NE856 Description

NoiseDISFigure,NF(dB)CONTINUED Maximum Associated Gain, Maximum Stable Gain, Associated Gain, MAG, MSG, GA (dB) NPN SILICON RF TRANSISTOR NE856 SERIE.
NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications.

NE856 Features

* HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz
* LOW NOISE FIGURE: 1.1 dB at 1 GHz
* HIGH COLLECTOR CURRENT: 100 mA
* HIGH RELIABILITY METALLIZATION

NE856 Applications

* Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 series offers excellent performance and reliability at low cost. This is achieved by NEC's titanium/platinum/gold metallization system and their direct nitride passivated base s

📥 Download Datasheet

Preview of NE856 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
NE856
Manufacturer
NEC
File Size
1.07 MB
Datasheet
NE856_NEC.pdf
Description
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

📁 Related Datasheet

  • NE85619-A - NPN SILICON EPITAXIAL TRANSISTOR (CEL)
  • NE85619-T1-A - NPN SILICON EPITAXIAL TRANSISTOR (CEL)
  • NE85633 - NPN Silicon RF Transistor (Renesas)
  • NE85634 - NPN SILICON RF TRANSISTOR (CEL)
  • NE856M02 - NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER (CEL)
  • NE851M03 - NPN SILICON TRANSISTOR (CEL)
  • NE851M13 - NPN SILICON TRANSISTOR (CEL)
  • NE851M33 - NPN SILICON TRANSISTOR (CEL)

📌 All Tags

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NEC
NEC NE856-like datasheet