NE856
NEC
1.07MB
Necs npn silicon high frequency transistor. NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise fig
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📁 Related Datasheet
NE85001 - 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
(NEC)
PRELIMINARY DATA SHEET
GaAs MES FET
NE85001 SERIES
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
DESCRIPTION
The NE8500199 Power GaAs FET covers.
NE8500100 - 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
(NEC)
PRELIMINARY DATA SHEET
GaAs MES FET
NE85001 SERIES
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
DESCRIPTION
The NE8500199 Power GaAs FET covers.
NE8500199 - 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
(NEC)
PRELIMINARY DATA SHEET
GaAs MES FET
NE85001 SERIES
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
DESCRIPTION
The NE8500199 Power GaAs FET covers.
NE85002 - 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
(NEC)
PRELIMINARY DATA SHEET
GaAs MES FET
NE85002 SERIES
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
DESCRIPTION
The NE8500295 power GaAs FET covers.
NE8500200 - 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
(NEC)
PRELIMINARY DATA SHEET
GaAs MES FET
NE85002 SERIES
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
DESCRIPTION
The NE8500295 power GaAs FET covers.
NE8500295-4 - 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
(NEC)
PRELIMINARY DATA SHEET
GaAs MES FET
NE85002 SERIES
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
DESCRIPTION
The NE8500295 power GaAs FET covers.
NE8500295-6 - 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
(NEC)
PRELIMINARY DATA SHEET
GaAs MES FET
NE85002 SERIES
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
DESCRIPTION
The NE8500295 power GaAs FET covers.
NE8500295-8 - 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
(NEC)
PRELIMINARY DATA SHEET
GaAs MES FET
NE85002 SERIES
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
DESCRIPTION
The NE8500295 power GaAs FET covers.
NE850R599A - C-BAND MEDIUM POWER GaAs MESFET
(NEC)
C-BAND MEDIUM POWER GaAs MESFET NE850R599A
FEATURES
• HIGH OUTPUT POWER: 0.5 W • HIGH LINEAR GAIN: 9.5 dB • HIGH EFFICIENCY (PAE): 38% • SUPERIOR INT.
NE851M03 - NPN SILICON TRANSISTOR
(CEL)
..
NEC's NPN SILICON TRANSISTOR NE851M03
FEATURES
• NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm pac.