* Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz
* High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
* Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2
NE85634
CEL
195.46 KB
Npn silicon rf transistor.
NPN SILICON RF TRANSISTOR
NE85634 / 2SC3357
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN POWER MINIMOLD
FEATU.
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