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NE85634 NPN SILICON RF TRANSISTOR

NE85634 Description

NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATU.

NE85634 Features

* Low noise and high gain NF = 1.1 dB TYP. , Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP. , Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz
* High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
* Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 

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Datasheet Details

Part number
NE85634
Manufacturer
CEL
File Size
195.46 KB
Datasheet
NE85634-CEL.pdf
Description
NPN SILICON RF TRANSISTOR

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NPN SILICON TRANSISTOR CEL
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