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NE85639R, NE8 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

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Description

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR .
E n ot T t n O r .

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This datasheet PDF includes multiple part numbers: NE85639R, NE8. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
NE85639R, NE8
Manufacturer
NEC
File Size
257.29 KB
Datasheet
NE8-5600.pdf
Description
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: NE85639R, NE8.
Please refer to the document for exact specifications by model.

Features

* HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E NE856 SERIES
* LOW NOISE FIGURE: 1.1 dB at 1 GHz
* HIGH COLLECTOR CURRENT: 100 mA
* HIGH RELIABILITY METALLIZATION
* LOW COST 00 (CHIP) VCC = 10 V, IC 7 mA MSG 4.0 3.5 3.0 2.5 NFMIN 2.0 1.5 1.0 0.4 0.5 1.0 2 3 4

Applications

* Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 series offers excellent performance and reliability at low cost. This is achieved by NEC's titanium/platinum/gold metallization system and their direct nitride passivated base s

NE85639R Distributors

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