Datasheet Details
Part number:
NE856M02
Manufacturer:
CEL
File Size:
195.88 KB
Description:
Npn epitaxial silicon transistor high frequency low distortion amplifier.
Datasheet Details
Part number:
NE856M02
Manufacturer:
CEL
File Size:
195.88 KB
Description:
Npn epitaxial silicon transistor high frequency low distortion amplifier.
NE856M02, NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
E B E 0.42 ±0.06 1.5 3.0 0.45 ±0.06 0.42 ±0.06 3.95±0.26 C 2.45±0.1 0.25±0.02 PIN CONNECTIONS E: Emitter C: Collector B: Base ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE2 fT CRE3 |S21E|2 NF1 NF2 PARAMETERS AND CONDITIONS
NE856M02 Features
* HIGH COLLECTOR CURRENT: 100 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz HIGH IP3: 32 dBm TYP at 1 GHz NE856M02 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1
📁 Related Datasheet
📌 All Tags