NE856M02 Datasheet, Amplifier, CEL

NE856M02 Features

  • Amplifier
  • HIGH COLLECTOR CURRENT: 100 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz

PDF File Details

Part number:

NE856M02

Manufacturer:

CEL

File Size:

195.88kb

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📄 Datasheet

Description:

Npn epitaxial silicon transistor high frequency low distortion amplifier. E B E 0.42 ±0.06 1.5 3.0 0.45 ±0.06 0.42 ±0.06 3.95±0.26 C 2.45±0.1 0.25±0.02 PIN CONNECTIONS E: Emitter C: Collector B: Ba

Datasheet Preview: NE856M02 📥 Download PDF (195.88kb)
Page 2 of NE856M02 Page 3 of NE856M02

NE856M02 Application

  • Applications requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost t

TAGS

NE856M02
NPN
EPITAXIAL
SILICON
TRANSISTOR
HIGH
FREQUENCY
LOW
DISTORTION
AMPLIFIER
CEL

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Stock and price

California Eastern Laboratories (CEL)
RF TRANS NPN 12V 6.5GHZ SOT-89
DigiKey
NE856M02-T1-AZ
0 In Stock
Qty : 1 units
Unit Price : $1.67
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