Datasheet Details
| Part number | NE856M02 |
|---|---|
| Manufacturer | CEL |
| File Size | 195.88 KB |
| Description | NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
| Datasheet |
 NE856M02_CEL.pdf
|
| Part number | NE856M02 |
|---|---|
| Manufacturer | CEL |
| File Size | 195.88 KB |
| Description | NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
| Datasheet |
NE856M02_CEL.pdf
|
E B E 0.42 ±0.06 1.5 3.0 0.45 ±0.06 0.42 ±0.06 3.95±0.26 C 2.45±0.1 0.25±0.02 PIN CONNECTIONS E: Emitter C: Collector B: Base ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE2 fT CRE3 |S21E|2 NF1 NF2 PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain at VCE = 10 V, IC = 20 mA Gain Bandwidth Product at VCE = 10 V, IC = 20 mA Feed-back Capacit
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