NE8500199 Datasheet - NEC

1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

NE8500199 Features

* Class A operation

* High power output

* High reliability PHYSICAL DIMENSIONS NE8500100 (CHIP) (unit: µm) 65 170 146 SELECTION CHART 100 PERFORMANCE SPECIFIED PART NUMBER FORM Pout (

* ) (dBm) GL (

* ) (dB) USABLE FREQUENCY (GHz) 2.0 to 10 100 100 780 640

NE8500199 General Description

The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package. The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, .

NE8500199 Datasheet (41.14 KB)

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Datasheet Details

Part number:

NE8500199

Manufacturer:

NEC

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41.14 KB

Description:

1 w c-band power gaas fet n-channel gaas mes fet.

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NE8500199 C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET NEC

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NE8500199 Features

NE8500199 General Description

Datasheet Details

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