NE85630 Datasheet - Renesas

NE85630 NPN Silicon RF Transistor

NE85630 Features

* Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz

* High gain : ⏐S21e⏐2 = 9 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz

* 3-pin super minimold package ORDERING INFORMATION Part Number NE85630 2SC4226 NE85630-T1 2SC4226-T1 Order Number NE85630-A 2SC4226-A N

Datasheet Details

NE85630

1.37 MB

Npn silicon rf transistor.

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NE85630 NPN Silicon Transistor Renesas

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