0.2 w x / ku-band power gaas mes fet.
* High Output Power
* High Linear Gain : Po (1 dB) = +25.0 dBm TYP. : 10.0 dB TYP.
* High Power Added Efficiency: 35 % TYP. @V DS = 9 V, IDset = 90 mA, f = 1.
for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linea.
The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low dist.
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