NE960R575 fet equivalent, 0.5 w x / ku-band power gaas mes fet.
* High Output Power
* High Linear Gain : Po (1 dB) = +27.5 dBm TYP. : 9.0 dB TYP.
* High Power Added Efficiency: 30 % TYP. @V DS = 9 V, IDset = 180 mA, f = 1.
for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power (CW) with high linea.
The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power (CW) with high linear gain, high efficiency and low dist.
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