Datasheet4U Logo Datasheet4U.com

NE960R5 0.5 W X / Ku-BAND POWER GaAs MES FET

NE960R5 Description

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET .
The NE960R5 Series are 0.

NE960R5 Features

* High Output Power
* High Linear Gain : Po (1 dB) = +27.5 dBm TYP. : 9.0 dB TYP.
* High Power Added Efficiency: 30 % TYP. @V DS = 9 V, IDset = 180 mA, f = 14.5 GHz ORDERING INFORMATION Part Number NE960R500 NE961R500 NE960R575 NE962R575 75 Package 00 (CHIP) Supplying Form

NE960R5 Applications

* for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R500 and the NE960R500 are available in chip

📥 Download Datasheet

Preview of NE960R5 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
NE960R5
Manufacturer
NEC
File Size
62.17 KB
Datasheet
NE960R5_NEC.pdf
Description
0.5 W X / Ku-BAND POWER GaAs MES FET

📁 Related Datasheet

  • NE9000xx - (NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET (NEC Electronics)
  • NE900175 - (NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET (NEC Electronics)
  • NE9001xx - (NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET (NEC Electronics)
  • NE9002xx - (NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET (NEC Electronics)
  • NE97733 - SILICON TRANSISTOR (California Eastern Labs)

📌 All Tags

0.5 Ku-BAND POWER GaAs MES FET NEC
NEC NE960R5-like datasheet