NE962R575 Datasheet - NEC

NE962R575, 0.5 W X / Ku-BAND POWER GaAs MES FET

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET ...
The NE960R5 Series are 0.

Features

* High Output Power
* High Linear Gain : Po (1 dB) = +27.5 dBm TYP. : 9.0 dB TYP.
* High Power Added Efficiency: 30 % TYP. @V DS = 9 V, IDset = 180 mA, f = 14.5 GHz ORDERING INFORMATION Part Number NE960R500 NE961R500 NE960R575 NE962R575 75 Package 00 (CHIP) Supplying Form

Applications

* for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R500 and the NE960R500 are available in chip

NE962R575_NEC.pdf