MOS FIELD EFFECT TRANSISTOR
NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE
N-CHANNEL POWER MOS FET
www.DataSheet4UT.choemse products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R> ORDERING INFORMATION
NP80N055EHE-E1-AY Note1, 2
NP80N055EHE-E2-AY Note1, 2
NP80N055CHE-S12-AZ Note1, 2
NP80N055DHE-S12-AY Note1, 2
Pure Sn (Tin)
Pure Sn (Tin)
Tape 800 p/reel
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A)
• Low input capacitance
Ciss = 2400 pF TYP.
• Built-in gate protection diode
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14096EJ7V0DS00 (7th edition)
Date Published October 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.