* Dual chip type
* Low on-resistance RDS(on)1 = 110 mΩ TYP. (VGS = 10 V, ID = 2.5 A) 1.44 RDS(on)2 = 170 mΩ TYP. (VGS = 4 V, ID = 2.5 A)
* Built-in G-S prote.

of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device befor.

This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters. FEATURES
* Dual chip type
* Low on-resistance RDS(on)1 = 110 mΩ TYP. (VGS = 10 V, ID = 2.5 A) 1.44 RDS(on)2 = 170 mΩ TYP. (VGS = 4 V, ID = 2.5 A)
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