UPA1758 N-Channel Power MOSFET

NEC

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1758 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE .
This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery applica.

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Datasheet Specifications

Part number: UPA1758
Manufacturer: NEC
File Size: 58.40 KB
Datasheet: UPA1758_NEC.pdf
Description: N-Channel Power MOSFET

Features

* Dual MOS FET chips in small package
* 2.5 V gate drive type low on-state resistance RDS(on)1 = 30 mΩ (MAX. ) (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 40 mΩ (MAX. ) (VGS = 2.5 V, ID = 3.0 A)
* Low Ciss : Ciss = 1100 pF (TYP. )
* Built-in G-S protection diode
* Small

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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UPA1758 N-Channel Power MOSFET NEC

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