UPA1759 N-Channel Power MOSFET

NEC

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1759 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING (Unit : mm) 8 5 1 ; Source 1 2 ; G.
This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters. Dual chip type. Low on-resistan.

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Datasheet Specifications

Part number: UPA1759
Manufacturer: NEC
File Size: 38.49 KB
Datasheet: UPA1759_NEC.pdf
Description: N-Channel Power MOSFET

Features

* Dual chip type
* Low on-resistance RDS(on)1 = 110 mΩ TYP. (VGS = 10 V, ID = 2.5 A) 1.44 RDS(on)2 = 170 mΩ TYP. (VGS = 4 V, ID = 2.5 A)
* Built-in G-S protection diode
* Small and surface mount package (Power SOP8) 1.8 Max. 6.0 ±0.3 4.4 0.8
* Low input cap

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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UPA1759 N-Channel Power MOSFET NEC

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