* Dual chip type
* Low on-resistance RDS(on)1 = 110 mΩ TYP. (VGS = 10 V, ID = 2.5 A) 1.44 RDS(on)2 = 170 mΩ TYP. (VGS = 4 V, ID = 2.5 A)
* Built-in G-S protection diode
* Small and surface mount package (Power SOP8) 1.8 Max. 6.0 ±0.3 4.4 0.8
* Low input cap
UPA1759
NEC
38.49 KB
N-channel power mosfet.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1759
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8 5 1 ; Source 1 2 ; G.
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