* Low on-state resistance RDS(on)1 = 16 mΩ MAX. (VGS = −10 V, ID = −4.0 A) RDS(on)2 = 25 mΩ MAX. (VGS = −4.5 V, ID = −4.0 A) RDS(on)3 = 30 mΩ MAX. (VGS = −4.0 V, ID =.

of notebook computers and Li-ion battery protection circuit. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5.

The µPA2713GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain FEATURES
*.

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