switching n- and p-channel power mos fet.
* Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS =
–10 V, ID =
–7.5 A) RDS(on)2 = 8.9 mΩ MAX. (VGS =
–4.5 V, ID =.
of notebook computers and Li-ion battery protection circuit.
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 : Source 4 : Gate 5.
The µ PA2717GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain
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