high-frequency low-noise amplifier npn silicon epitaxial twin transistor.
* Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
* 6-pin thin-type small mini mold package adopte.
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