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UPD2118-3 Datasheet 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY

Manufacturer: NEC (now Renesas Electronics)

Download the UPD2118-3 datasheet PDF. This datasheet also includes the UPD2118 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (UPD2118-NEC.pdf) that lists specifications for multiple related part numbers.

Overview

NEe Microcomputers, Inc.

16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY NEe ,uPD2118 ,uPD2118-2 JI.

Key Features

  • Single+5VSupply,±10%Tolerance.
  • Low Power: 138 mW Max Operating 16 mW Max Standby.
  • Low VDD Current Transients.
  • All Inputs, Including Clocks, TTL Compatible.
  • Non.
  • Latched Output is Three.
  • State.
  • RAS.
  • Only.
  • Refresh.
  • 128 Refresh Cycles Required.
  • Page Mode Capability.
  • CAS Controlled Output Allows Hidden Refresh PIN IlPD2118 IlPD2118.
  • 2 IlPD2118.
  • 3 ACCESS TIME 150 ns 120 ns 100 r1'S RIW CYC.