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UPD44165182, UPD44165082 (UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION

UPD44165182 Description

DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION .
The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362 is a 524,288-word by 36-bit synchrono.

UPD44165182 Features

* 1.8 ± 0.1 V power supply and HSTL I/O
* DLL circuitry for wide output data valid window and future frequency scaling
* Separate independent read and write data ports with concurrent transactions
* 100% bus utilization DDR READ and WRITE operation
* Two-tick

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This datasheet PDF includes multiple part numbers: UPD44165182, UPD44165082. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
UPD44165182, UPD44165082
Manufacturer
NEC
File Size
385.19 KB
Datasheet
UPD44165082_NEC.pdf
Description
(UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION
Note
This datasheet PDF includes multiple part numbers: UPD44165182, UPD44165082.
Please refer to the document for exact specifications by model.

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