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UPD44165182 Datasheet (upd44165082/182/362) 18m-bit Qdrii Sram 2-word Burst Operation

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

The µPD44165082, µPD44165182 and µPD44165362 integrates unique synchronous peripheral circuitry and a burst counter.

All input registers controlled by an input clock pair (K and /K) are latched on the positive edge of K and /K.

Key Features

  • 1.8 ± 0.1 V power supply and HSTL I/O.
  • DLL circuitry for wide output data valid window and future frequency scaling.
  • Separate independent read and write data ports with concurrent transactions.
  • 100% bus utilization DDR READ and WRITE operation.
  • Two-tick burst for low DDR transaction size.
  • Two input clocks (K and /K) for precise DDR timing at clock rising edges only.
  • Two output clocks (C and /C) for precise flight time and clock skew.

UPD44165182 Distributor