Datasheet Details
| Part number | UPD44165182 |
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| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 385.19 KB |
| Description | (UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION |
| Datasheet | UPD44165182 UPD44165082 Datasheet (PDF) |
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Overview: DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | UPD44165182 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 385.19 KB |
| Description | (UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION |
| Datasheet | UPD44165182 UPD44165082 Datasheet (PDF) |
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The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
The µPD44165082, µPD44165182 and µPD44165362 integrates unique synchronous peripheral circuitry and a burst counter.
All input registers controlled by an input clock pair (K and /K) are latched on the positive edge of K and /K.
| Part Number | Description |
|---|---|
| UPD44165184 | (UPD44165084/184/364) 18M-BIT QDRII SRAM 4-WORD BURST OPERATION |
| UPD44165082 | (UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION |
| UPD44165084 | (UPD44165084/184/364) 18M-BIT QDRII SRAM 4-WORD BURST OPERATION |
| UPD44165362 | (UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION |
| UPD44165364 | (UPD44165084/184/364) 18M-BIT QDRII SRAM 4-WORD BURST OPERATION |
| UPD4416001 | 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT |
| UPD4416004 | 16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT |
| UPD4416008 | 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT |
| UPD4416016 | 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT |
| UPD44164082 | (UPD44164082/182/362) 18M-BIT DDRII SRAM 2-WORD BURST OPERATION |