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UPD44323362 - 32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM

Description

The µPD44323362 is a 1,048,576 words by 36 bits synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-transistor memory cell.

Features

  • Fully synchronous operation.
  • HSTL Input / Output levels.
  • Fast clock access time: 2.0 ns / 250 MHz.
  • Asynchronous output enable control: /G.
  • Byte write control: /SBa (DQa1 to DQa9), /SBb (DQb1 to DQb9), /SBc (DQc1 to DQc9), /SBd (DQd1 to DQd9).
  • Common I/O using three-state outputs.
  • Internally self-timed write cycle.
  • Late write with 1 dead cycle between Read-Write.
  • User-configurable outputs: Controlled impedance outpu.

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Datasheet preview – UPD44323362

Datasheet Details

Part number UPD44323362
Manufacturer NEC
File Size 273.29 KB
Description 32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM
Datasheet download datasheet UPD44323362 Datasheet
Additional preview pages of the UPD44323362 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com DATA SHEET MOS INTEGRATED CIRCUIT µPD44323362 32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 1M-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE Description The µPD44323362 is a 1,048,576 words by 36 bits synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-transistor memory cell. The µPD44323362 is suitable for applications which require high-speed, low voltage, high-density memory and wide bit configuration, such as cache and buffer memory. The µPD44323362 is packaged in a 119-pin PLASTIC BGA (Ball Grid Array). Features • Fully synchronous operation • HSTL Input / Output levels • Fast clock access time: 2.
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