UPD4481182 datasheet, sram equivalent, NEC

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UPD4481182 Features and benefits

* Low voltage core supply : VDD = 3.3 ± 0.165 V (-A44, -A50, -A60, -A75, -A44Y, -A50Y, -A60Y, -A75Y) VDD = 2.5 ± 0.125 V (-C60, -C75, -C60Y, -C75Y)
* Synchronous .

UPD4481182 Application

which require synchronous operation, high speed, low voltage, high density and wide bit configuration, such as buffer me.

UPD4481182 Description

The µPD4481162 is a 524,288-word by 16-bit, the µPD4481182 is a 524,288-word by 18-bit, the µPD4481322 is a 262,144-word by 32-bit and the µPD4481362 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CM.

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