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UPD4616112-X - 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

Description

The µPD4616112-X is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.

The µPD4616112-X is fabricated with advanced CMOS technology using one-transistor memory cell.

Features

  • 1,048,576 words by 16 bits organization.
  • Fast access time: 85, 95 ns (MAX. ).
  • Byte data control: /LB (I/O0 - I/O7), /UB (I/O8 - I/O15).
  • Low voltage operation: VCC = 2.6 to 3.1 V.
  • Operating ambient temperature: TA =.
  • 25 to +85 °C.
  • Output Enable input for easy.

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Datasheet preview – UPD4616112-X

Datasheet Details

Part number UPD4616112-X
Manufacturer NEC
File Size 264.91 KB
Description 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
Datasheet download datasheet UPD4616112-X Datasheet
Additional preview pages of the UPD4616112-X datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS INTEGRATED CIRCUIT µPD4616112-X 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4616112-X is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration. The µPD4616112-X is fabricated with advanced CMOS technology using one-transistor memory cell. The µPD4616112-X is packed in 48-pin TAPE FBGA. Features • 1,048,576 words by 16 bits organization • Fast access time: 85, 95 ns (MAX.) • Byte data control: /LB (I/O0 - I/O7), /UB (I/O8 - I/O15) • Low voltage operation: VCC = 2.6 to 3.
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