Datasheet4U Logo Datasheet4U.com

UPD4616112

16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT

UPD4616112 Features

* 1,048,576 words by 16 bits organization 5

* Fast access time: 80, 90 ns (MAX.)

* Byte data control: /LB (I/O0 - I/O7), /UB (I/O8 - I/O15)

* Low voltage operation: VCC = 2.6 to 3.0 V

* Operating ambient temperature: TA =

* 20 to +70 °C

* Outpu

UPD4616112 General Description

The µPD4616112 is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration. The µPD4616112 is fabricated with advanced CMOS technology using one-transistor memory cell. The µPD4616112 is p.

UPD4616112 Datasheet (272.04 KB)

Preview of UPD4616112 PDF

Datasheet Details

Part number:

UPD4616112

Manufacturer:

NEC

File Size:

272.04 KB

Description:

16m-bit cmos mobile specified ram 1m-word by 16-bit.

📁 Related Datasheet

UPD4616112-X 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION (NEC)

UPD46128512-X 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION (NEC)

UPD46128953-X 128M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 32-BIT ADDRESS / DATA MULTIPLEXED EXTENDED TEMPERATURE OPERATION (NEC)

uPD46184095B 18M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION (Renesas)

uPD46184182B 18M-BIT DDR II SRAM 2-WORD BURST OPERATION (Renesas)

uPD46184184B 18M-BIT DDR II SRAM 4-WORD BURST OPERATION (Renesas)

uPD46184185B 18M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION (Renesas)

uPD46184362B 18M-BIT DDR II SRAM 2-WORD BURST OPERATION (Renesas)

uPD46185084B 18M-BIT QDR II SRAM 4-WORD BURST OPERATION (Renesas)

uPD46185092B 18M-BIT QDR II SRAM 2-WORD BURST OPERATION (Renesas)

TAGS

UPD4616112 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD 16-BIT NEC

Image Gallery

UPD4616112 Datasheet Preview Page 2 UPD4616112 Datasheet Preview Page 3

UPD4616112 Distributor