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UPD4616112 Datasheet - NEC

UPD4616112 - 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT

The µPD4616112 is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration.

The µPD4616112 is fabricated with advanced CMOS technology using one-transistor memory cell.

The µPD4616112 is p

UPD4616112 Features

* 1,048,576 words by 16 bits organization 5

* Fast access time: 80, 90 ns (MAX.)

* Byte data control: /LB (I/O0 - I/O7), /UB (I/O8 - I/O15)

* Low voltage operation: VCC = 2.6 to 3.0 V

* Operating ambient temperature: TA =

* 20 to +70 °C

* Outpu

UPD4616112_NEC.pdf

Preview of UPD4616112 PDF
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Datasheet Details

Part number:

UPD4616112

Manufacturer:

NEC

File Size:

272.04 KB

Description:

16m-bit cmos mobile specified ram 1m-word by 16-bit.

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