NE500199 Datasheet - NEC Electronics

C-Band Medium Power GaAs MESFET

NE500199 Features

* HIGH OUTPUT POWER: 1 W

* HIGH LINEAR GAIN: 9.0 dB

* HIGH EFFICIENCY: 37% (PAE)

* INDUSTRY STANDARD PACKAGING

* THIS DEVICE IS ALSO AVAILABLE AS A TWO-CELL CHIP: NE8500100 ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C unless otherwise noted) SYMBOLS VDS VGD VGS IDS

NE500199 General Description

The NE8500199 is a medium power GaAs MESFET designed for up to a 1W output stage or as a driver for higher power devices. The device has no internal matching and can be used at frequencies from UHF to 8.5 GHZ. The device is available in the “99” package or in chip form. The chip is a twocell die; bo.

NE500199 Datasheet (86.97 KB)

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Datasheet Details

Part number:

NE500199

Manufacturer:

NEC Electronics

File Size:

86.97 KB

Description:

C-band medium power gaas mesfet.

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NE500199 C-Band Medium Power GaAs MESFET NEC Electronics

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NE500199 Features

NE500199 General Description

Datasheet Details

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