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PP4B10BS, PP4B10BS-NIKO Datasheet - NIKO-SEM

PP4B10BS N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor PP4B10BS TO-263 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 4.2mΩ ID 134A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 1mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperat.

PP4B10BS-NIKO-SEM.pdf

This datasheet PDF includes multiple part numbers: PP4B10BS, PP4B10BS-NIKO. Please refer to the document for exact specifications by model.
PP4B10BS Datasheet Preview Page 2 PP4B10BS Datasheet Preview Page 3

Datasheet Details

Part number:

PP4B10BS, PP4B10BS-NIKO

Manufacturer:

NIKO-SEM

File Size:

190.34 KB

Description:

N-channel enhancement mode field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: PP4B10BS, PP4B10BS-NIKO.
Please refer to the document for exact specifications by model.

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TAGS

PP4B10BS PP4B10BS-NIKO N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM

PP4B10BS Distributor