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KSD5060 - Silicon NPN Power Transistor

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KSD5060 Product details

Description

High Breakdown Voltage- : VCBO= 1500V(Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 2.5 A ICP Collector Current-Peak Collector Power Dissipation

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