KSD5070 Silicon NPN Power Transistor

NJS

Description

Jziizu <^)£.mi-(-on.auctoi Lrioauchi, Una.20 STERN AVE.SPRINGFIELD, NEW JERSEY 07081 U.S.A.Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. High Reliability. Built-in Damper Diode f 1_,.

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Datasheet Specifications

Part number: KSD5070
Manufacturer: NJS
File Size: 63.69 KB
Datasheet: KSD5070-NewJerseySemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V' VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 2.5 A ICP Collecto

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KSD5070 Silicon NPN Power Transistor NJS

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