Datasheet4U Logo Datasheet4U.com

KSD5070 Datasheet Silicon NPN Power Transistor

Manufacturer: NJS

Overview: Jziizu <^)£.mi-(-on.auctoi Lrioauchi, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A.

Datasheet Details

Part number KSD5070
Manufacturer NJS
File Size 63.69 KB
Description Silicon NPN Power Transistor
Download KSD5070 Download (PDF)

General Description

• High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • High Reliability • Built-in Damper Diode f 1_, 1~mp ^ PIN 1.BASE 2.

COLLECTOR 3.BJTTER TO-3PML package APPLICATIONS • Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V' VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 2.5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25'C Tj Junction Temperature Tstg Storage Temperature Range 10 A 50 W 150 •c -55-150 °c { : • : .

.

KSD5070 Distributor & Price

Compare KSD5070 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.