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Jziizu <^)£.mi-(-on.auctoi Lrioauchi, Una.
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
KSD5070
DESCRIPTION • High Breakdown Voltage-
: VCBO= 1500V (Min) • High Switching Speed • High Reliability • Built-in Damper Diode
f 1_,
1~mp
^
PIN 1.BASE 2. COLLECTOR 3.BJTTER TO-3PML package
APPLICATIONS • Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
1500
V
VCEO Collector-Emitter Voltage
800
V'
VEBO Emitter-Base Voltage
6
V
Ic
Collector Current- Continuous
2.
KSD5070 Datasheet
