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2N5884 - Silicon Power Transistor

General Description

The 2N5884 (PNP) and 2N5886 (NPN) are silicon complementary transistors designed for use in general purpose power amplifier and switching applications.

Key Features

  • D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 15A D Excellent DC Current Gain: hFE = 20.
  • 100 @ IC = 10A Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 80V Collector.
  • Base Voltage, VCBO.
  • 80V Emitter.
  • Base Voltage, VEBO.

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Datasheet Details

Part number 2N5884
Manufacturer NTE Electronics (defunct)
File Size 60.80 KB
Description Silicon Power Transistor
Datasheet download datasheet 2N5884 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5884 (PNP) & 2N5886 (NPN) Silicon Power Transistor High Power Audio Amplifier TO−3 Type Package Description: The 2N5884 (PNP) and 2N5886 (NPN) are silicon complementary transistors designed for use in general purpose power amplifier and switching applications. Features: D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 15A D Excellent DC Current Gain: hFE = 20 − 100 @ IC = 10A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . .