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2N5884 (PNP) & 2N5886 (NPN) Silicon Power Transistor
High Power Audio Amplifier TO−3 Type Package
Description: The 2N5884 (PNP) and 2N5886 (NPN) are silicon complementary transistors designed for use in general purpose power amplifier and switching applications.
Features: D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 15A D Excellent DC Current Gain: hFE = 20 − 100 @ IC = 10A
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . .