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2N6668 - Silicon PNP Transistors

This page provides the datasheet information for the 2N6668, a member of the 2N6666 Silicon PNP Transistors family.

Description

The 2N6666, 2N6667, and 2N6668 are silicon PNP Darlington power transistors in a TO 220 type package designed for general purpose amplifier and low

speed switching applications.

Features

  • D DC Current Gain: hFE = 3000 (Typ) @ IC = 4A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 40V (Min).
  • 2N6666 = 60V (Min).
  • 2N6667 = 80V (Min).
  • 2N6668 D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = = 2V 2V Max Max @ @ IICC = = 3A 5A.
  • 2N6666 2N6667, 2N6668 Absolute Maximum Ratings: Collector.
  • Emitter 2N6666 . . Voltage, V. . C. E. O.

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Datasheet preview – 2N6668

Datasheet Details

Part number 2N6668
Manufacturer NTE
File Size 64.42 KB
Description Silicon PNP Transistors
Datasheet download datasheet 2N6668 Datasheet
Additional preview pages of the 2N6668 datasheet.

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Full PDF Text Transcription

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2N6666, 2N6667, 2N6668 Silicon PNP Transistors Darlington Power Amplifier TO−220 Type Package Description: The 2N6666, 2N6667, and 2N6668 are silicon PNP Darlington power transistors in a TO−220 type package designed for general purpose amplifier and low−speed switching applications. Features: D DC Current Gain: hFE = 3000 (Typ) @ IC = 4A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 40V (Min) − 2N6666 = 60V (Min) − 2N6667 = 80V (Min) − 2N6668 D Low Collector−Emitter Saturation Voltage: VCE(sat) = = 2V 2V Max Max @ @ IICC = = 3A 5A − − 2N6666 2N6667, 2N6668 Absolute Maximum Ratings: Collector−Emitter 2N6666 . . Voltage, ........ V. .C.E.O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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