2N6668 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification 2N6668 DESCRIPTION ·High DC Current Gain- : hFE = 1000(

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HI-SINCERITY MICROELECTRONICS CORP. H2N6668 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6754 Issued Date : 1998.07.01 Revised Date : 2004.11.03 Pag

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2N6668 SILICON PNP POWER DARLINGTON TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6667/D 2N6609 (See 2N3773) Darlington Silicon Power Transistor

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www.DataSheet4U.com 2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications.

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2N6666, 2N6667, 2N6668 Silicon PNP Transistors Darlington Power Amplifier TO−220 Type Package Description: The 2N6666, 2N6667, and 2N6668 are silicon

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