logo

NTE190 Datasheet, NTE

NTE190 amplifier equivalent, silicon npn transistor high voltage amplifier.

NTE190 Avg. rating / M : 1.0 rating-15

datasheet Download

NTE190 Datasheet

Features and benefits

D High Collector
  –Emitter Breakdown Voltage: V(BR)CEO = 180V (Min) @ IC = 1mA D Low Collector
  –Emitter Saturation Voltatge: VCE(sat) = 0.5V.

Application

high voltage linear amplifiers, and high voltage transistor regulators. Features: D High Collector
  –Emit.

Image gallery

NTE190 Page 1 NTE190 Page 2

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts