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A2I09VD015GNR1, A2I09VD015NR1 Power Amplifiers

A2I09VD015GNR1 Description

NXP Semiconductors Technical Data Document Number: A2I09VD015N Rev.0, 06/2018 RF LDMOS Wideband Integrated Power Amplifiers The A2I09VD015N wideba.

A2I09VD015GNR1 Features

* On
* chip matching (50 ohm input, DC blocked)
* Integrated quiescent current temperature compensation with enable/disable function (2)
* Designed for digital predistortion error correction systems

A2I09VD015GNR1 Applications

* A2I09VD015NR1 A2I09VD015GNR1 575
* 960 MHz, 2 W AVG. , 48 V AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS TO
* 270WB
* 15 PLASTIC A2I09VD015NR1 TO
* 270WBG
* 15 PLASTIC A2I09VD015GNR1 VDS1A RFinA VGS1A VGS2A VGS1B VGS2B RFinB VDS1B Quiescent Current Temperatur

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: A2I09VD015GNR1, A2I09VD015NR1. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
A2I09VD015GNR1, A2I09VD015NR1
Manufacturer
NXP ↗
File Size
541.45 KB
Datasheet
A2I09VD015NR1-NXP.pdf
Description
Power Amplifiers
Note
This datasheet PDF includes multiple part numbers: A2I09VD015GNR1, A2I09VD015NR1.
Please refer to the document for exact specifications by model.

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Power Amplifiers NXP
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