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NXP Semiconductors Electronic Components Datasheet

A2I09VD015GNR1 Datasheet

Power Amplifiers

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NXP Semiconductors
Technical Data
Document Number: A2I09VD015N
Rev. 0, 06/2018
RF LDMOS Wideband Integrated
Power Amplifiers
The A2I09VD015N wideband integrated circuit is designed with on--chip
matching that makes it usable from 575 to 960 MHz. This multi -- stage
structure is rated for 48 to 55 V operation and covers all typical cellular base
station modulation formats.
900 MHz
Typical Single--Carrier W--CDMA Characterization Performance:
VDD = 48 Vdc, IDQ1(A+B) = 16 mA, IDQ2(A+B) = 84 mA, Pout = 2 W Avg., Input
Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency
Gps
(dB)
PAE
(%)
ACPR
(dBc)
920 MHz
940 MHz
960 MHz
32.9
19.3
–45.9
33.0
19.7
–45.5
32.8
19.6
–44.9
Features
On--chip matching (50 ohm input, DC blocked)
Integrated quiescent current temperature compensation with
enable/disable function (2)
Designed for digital predistortion error correction systems
Optimized for Doherty applications
A2I09VD015NR1
A2I09VD015GNR1
575–960 MHz, 2 W AVG., 48 V
AIRFAST RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
TO--270WB--15
PLASTIC
A2I09VD015NR1
TO--270WBG--15
PLASTIC
A2I09VD015GNR1
VDS1A
RFinA
VGS1A
VGS2A
VGS1B
VGS2B
RFinB
VDS1B
Quiescent Current
Temperature Compensation (2)
Quiescent Current
Temperature Compensation (2)
Figure 1. Functional Block Diagram
RFout1/VDS2A
RFout2/VDS2B
VDS1A
1
VGS2A
2
VGS1A
3
RFinA
4
N.C.
5
N.C.
6
N.C.
7
N.C.
8
RFinB
9
VGS1B
10
VGS2B
11
VDS1B
12
15
RFout1/VDS2A
14 N.C.
13
RFout2/VDS2B
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 2. Pin Connections
1. All data measured in fixture with device soldered to heatsink.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.
2018 NXP B.V.
RF Device Data
NXP Semiconductors
A2I09VD015NR1 A2I09VD015GNR1
1


NXP Semiconductors Electronic Components Datasheet

A2I09VD015GNR1 Datasheet

Power Amplifiers

No Preview Available !

Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range (1,2)
Input Power
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 74C, 2 W, 940 MHz
Stage 1, 48 Vdc, IDQ1(A+B) 16 mA
Stage 2, 48 Vdc, IDQ2(A+B) 78 mA
Table 3. ESD Protection Characteristics
VDSS
VGS
VDD
Tstg
TC
TJ
Pin
Symbol
RJC
–0.5, +105
–0.5, +10
55, +0
–65 to +150
–40 to +150
–40 to +225
20
Value (2,3)
7.2
3.1
Vdc
Vdc
Vdc
C
C
C
dBm
Unit
C/W
Test Methodology
Class
Human Body Model (per JS--001--2017)
1B
Charge Device Model (per JS--002--2014)
C0B
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
A2I09VD015NR1 A2I09VD015GNR1
2
RF Device Data
NXP Semiconductors


Part Number A2I09VD015GNR1
Description Power Amplifiers
Maker NXP
Total Page 3 Pages
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