Datasheet Summary
NXP Semiconductors Technical Data
Document Number: A2I09VD030N Rev. 2, 10/2022
RF LDMOS Wideband Integrated Power Amplifiers
The A2I09VD030N wideband integrated circuit is designed with on- chip matching that makes it usable from 575 to 1300 MHz. This multi- stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.
900 MHz
- Typical Single- Carrier W- CDMA Performance: VDD = 48 Vdc,
IDQ1(A+B) = 46 mA, IDQ2(A+B) = 154 mA, Pout = 4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps (dB)
PAE (%)
ACPR (dBc)
920 MHz 940 MHz 960 MHz
- 45.0
- 44.6
- 44.3
700 MHz
- Typical...