Overview: NXP Semiconductors Technical Data Document Number: A2I09VD030N Rev. 2, 10/2022 RF LDMOS Wideband Integrated Power Amplifiers The A2I09VD030N wideband integrated circuit is designed with on−chip matching that makes it usable from 575 to 1300 MHz. This multi−stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats. 900 MHz • Typical Single−Carrier W−CDMA Performance: VDD = 48 Vdc,
IDQ1(A+B) = 46 mA, IDQ2(A+B) = 154 mA, Pout = 4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) PAE (%) ACPR (dBc) 920 MHz 940 MHz 960 MHz 34.4 19.9 –45.0 34.5 20.0 –44.6 34.3 19.8 –44.3 700 MHz • Typical Single−Carrier W−CDMA Performance: VDD = 48 Vdc,
IDQ1(A+B) = 50 mA, IDQ2(A+B) = 150 mA, Pout = 4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) PAE (%) ACPR (dBc) 728 MHz 30.9 19.6 –44.7 748 MHz 31.1 19.5 –45.5 768 MHz 31.2 19.3 –46.
