A2I20H080NR1 Description
Freescale Semiconductor Technical Data Document Number: 0, 3/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I20H080N wideband integrated circuit is an asymmetrical Doherty designed with on--chip matching that makes it usable from 1800 to 2200 MHz. This multi--stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.
A2I20H080NR1 Key Features
- Advanced High Performance In--Package Doherty
- On--Chip Matching (50 Ohm Input, DC Blocked)