A2I35H060NR1 Datasheet RF LDMOS Wideband Integrated Power Amplifiers

Manufacturer: NXP Semiconductors

A2I35H060NR1 rf ldmos wideband integrated power amplifiers by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	A2I35H060NR1
Manufacturer	NXP Semiconductors
File Size	485.17 KB
Description	RF LDMOS Wideband Integrated Power Amplifiers
Datasheet	A2I35H060NR1 Datasheet

Overview

Freescale Semiconductor Technical Data Document Number: A2I35H060N Rev.

0, 4/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I35H060N wideband integrated circuit is an asymmetrical Doherty designed with on--chip matching that makes it usable from 3400 to 3800 MHz.

This multi--stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.

Key Features

Advanced High Performance In--Package Doherty.
On--Chip Matching (50 Ohm Input, DC Blocked).
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2).
Designed for Digital Predistortion Error Correction Systems A2I.

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