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Freescale Semiconductor Technical Data
RF Power LDMOS Transistor
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET
Designed for handheld two--way radio applications with frequencies from
136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in
handheld radio equipment.
Narrowband Performance (7.5 Vdc, IDQ = 100 mA, TA = 25C, CW)
Frequency (MHz)
Gps D Pout (dB) (%) (W)
520 (1)
18.3 73.0
6.0
Wideband Performance (7.5 Vdc, TA = 25C, CW)
Frequency Pin Gps D Pout
(MHz)
(W) (dB) (%)
(W)
136–174
0.19
440--520 (2)
0.15
760--870 (3)
0.20
Load Mismatch/Ruggedness
15.5 16.3 15.2
60.0 65.0 58.5
6.0 6.4 6.
AFT05MS006NT1 Datasheet
