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AFT09MS031NR1 Datasheet RF Power LDMOS Transistor

Manufacturer: NXP Semiconductors

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Overview

Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz.

The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment.

Narrowband Performance (13.6 Vdc, IDQ = 500 mA, TA = 25°C, CW) Frequency (MHz) Gps (dB) ηD P1dB (%) (W) 764 18.0 74.1 32 870 17.2 71.0 31 941 15.7 68.1 31 800 MHz Broadband Performance (13.6 Vdc, IDQ = 100 mA, TA = 25°C, CW) Frequency (MHz) Gps (dB) ηD P1dB (%) (W) 760 15.7 62.0 44 820 15.7 63.0 37 870 15.5 61.0 36 Load Mismatch/Ruggedness Frequency Signal (MHz) Type VSWR Pin Test (W) Voltage Result 870 (1) CW >65:1 at all 1.2 Phase Angles (3 dB Overdrive) 17 No Device Degradation 870 (2) 2.0 (3 dB Overdrive) 1.

Key Features

  • Characterized for Operation from 764 to 941 MHz.
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization.
  • Integrated ESD Protection.
  • Integrated Stability Enhancements.
  • Wideband.
  • Full Power Across the Band (764.
  • 870 MHz).
  • 225°C Capable Plastic Package.
  • Exceptional Thermal Performance.
  • High Linearity for: TETRA, SSB, LTE.
  • Cost--effective Over--molded Plastic Packaging.
  • In Tape an.

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