BF1201WR Datasheet - NXP

N-channel dual-gate PoLo MOS-FETs

BF1201WR Features

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier

* Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS

* VH

BF1201WR General Description

source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1201R marking code: LBp Fig.2 Simplified outline (SOT143R). 3 page 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and sou.

BF1201WR Datasheet (113.99 KB)

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Datasheet Details

Part number:

BF1201WR

Manufacturer:

NXP ↗

File Size:

113.99 KB

Description:

N-channel dual-gate polo mos-fets.
DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product speciﬁcation Supersedes data of 1999 Dec 01 2.

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BF1201WR N-channel dual-gate PoLo MOS-FETs NXP

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BF1201WR Features

BF1201WR General Description

Datasheet Details

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