BF1202WR mos-fets equivalent, n-channel dual-gate polo mos-fets.
* Short channel transistor with high forward transfer admittance to input capacitance ratio
* Low noise gain controlled amplifier
* Partly internal self-biasi.
* VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analogue television tuners and professi.
source drain gate 2 gate 1
Top view
MSB035
handbook, 2 columns 3
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BF1202R marking code: LEp
Fig.2
Simplified outline (SOT143R).
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page
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DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate inter.
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