• Part: BF1202WR
  • Description: N-channel dual-gate PoLo MOS-FETs
  • Category: MOSFET
  • Manufacturer: NXP Semiconductors
  • Size: 116.06 KB
Download BF1202WR Datasheet PDF
NXP Semiconductors
BF1202WR
FEATURES - Short channel transistor with high forward transfer admittance to input capacitance ratio - Low noise gain controlled amplifier - Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS - VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analogue television tuners and professional munications equipment. handbook, 2 columns 4 BF1202; BF1202R; BF1202WR PINNING PIN 1 2 3 4 DESCRIPTION source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 BF1202R marking code: LEp Fig.2 Simplified outline (SOT143R). 3 page DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. QUICK REFERENCE DATA SYMBOL VDS...