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BF1202WR - N-channel dual-gate PoLo MOS-FETs

Description

Simplified outline (SOT143R).

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.

Features

  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier.
  • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

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Other Datasheets by NXP Semiconductors

Part Number Description
BF1202 N-channel dual-gate PoLo MOS-FETs
BF1202R N-channel dual-gate PoLo MOS-FETs
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DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 1999 Dec 01 2000 Mar 29 Philips Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS • VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analogue television tuners and professional communications equipment.
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