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NXP Semiconductors Electronic Components Datasheet

BF1201R Datasheet

N-channel dual-gate PoLo MOS-FETs

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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1201; BF1201R; BF1201WR
N-channel dual-gate PoLo
MOS-FETs
Product specification
Supersedes data of 1999 Dec 01
2000 Mar 29


NXP Semiconductors Electronic Components Datasheet

BF1201R Datasheet

N-channel dual-gate PoLo MOS-FETs

No Preview Available !

Philips Semiconductors
N-channel dual-gate PoLo MOS-FETs
Product specification
BF1201; BF1201R;
BF1201WR
FEATURES
Short channel transistor with high
forward transfer admittance to input
capacitance ratio
Low noise gain controlled amplifier
Partly internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
PINNING
PIN
1
2
3
4
DESCRIPTION
source
drain
gate 2
gate 1
APPLICATIONS
VHF and UHF applications with
3 to 9 V supply voltage, such as
digital and analogue television
tuners and professional
communications equipment.
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1201,
BF1201R and BF1201WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
handbook, 2 c4olumns
3
1
Top view
2
MSB014
BF1201 marking code: LAp.
Fig.1 Simplified outline
(SOT143B).
handbook, 2 co3lumns
4
2
Top view
1
MSB035
BF1201R marking code: LBp
Fig.2 Simplified outline
(SOT143R).
page
3
4
2
Top view
1
MSB842
BF1201WR marking code: LA
Fig.3 Simplified outline
(SOT343R).
QUICK REFERENCE DATA
SYMBOL
VDS
ID
Ptot
yfs
Cig1-ss
Crss
F
Xmod
Tj
PARAMETER
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
operating junction temperature
CONDITIONS
f = 1 MHz
f = 400 MHz
input level for k = 1% at
40 dB AGC
MIN.
23
105
TYP.
28
2.6
15
1
MAX.
10
30
200
35
3.1
30
1.8
UNIT
V
mA
mW
mS
pF
fF
dB
dBµV
− − 150 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Mar 29
2


Part Number BF1201R
Description N-channel dual-gate PoLo MOS-FETs
Maker NXP
Total Page 16 Pages
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1 BF1201 N-channel dual-gate PoLo MOS-FETs
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2 BF1201R N-channel dual-gate PoLo MOS-FETs
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3 BF1201WR N-channel dual-gate PoLo MOS-FETs
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