BF1202 Datasheet - NXP

N-channel dual-gate PoLo MOS-FETs

BF1202 Features

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier

* Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS

* VH

BF1202 General Description

source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1202R marking code: LEp Fig.2 Simplified outline (SOT143R). 3 page 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and sou.

BF1202 Datasheet (116.06 KB)

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Datasheet Details

Part number:

BF1202

Manufacturer:

NXP ↗

File Size:

116.06 KB

Description:

N-channel dual-gate polo mos-fets.
DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product speciﬁcation Supersedes data of 1999 Dec 01 2.

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BF1202 N-channel dual-gate PoLo MOS-FETs NXP

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BF1202 Features

BF1202 General Description

Datasheet Details

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