BF1212WR mos-fets equivalent, n-channel dual-gate mos-fets.
* Short channel transistor with high forward transfer admittance to input capacitance ratio
* Low noise gain controlled amplifier
* Excellent low frequency no.
* Gain controlled low noise VHF and UHF amplifiers for 5 V digital and analog television tuner applications. DESCRIP.
Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1212, BF1212R and BF1212WR are encapsulated in the SOT143B, .
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