* Low leakage level (typ. 500 fA)
* High gain
* Low cut-off voltage. BF556A; BF556B; BF556C handbook, halfpage 2 1 g d s APPLICATIONS
* Impedance converters in e.g. electret microphones and infra-red detectors
* VHF amplifiers in oscillators and mixers.
BF556B
100.60 KB
N-channel silicon junction field-effect transistors.
DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification Supersedes data o.
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