BF556A
FEATURES
- Low leakage level (typ. 500 f A)
- High gain
- Low cut-off voltage.
BF556A; BF556B; BF556C handbook, halfpage 2
1 g d s
APPLICATIONS
- Impedance converters in e.g. electret microphones and infra-red detectors
- VHF amplifiers in oscillators and mixers. DESCRIPTION
N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. PINNING
- SOT23 PIN 1 2 3 SYMBOL s d g drain gate‘ DESCRIPTION source CAUTION
Top view
MAM036
Marking codes: BF556A: M84. BF556B: M85. BF556C: M86.
Fig.1 Simplified outline and symbol.
The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
QUICK REFERENCE DATA SYMBOL VDS VGSoff IDSS PARAMETER drain-source voltage (DC) gate-source cut-off voltage drain current BF556A BF556B BF556C Ptot yfs total power dissipation forward transfer admittance up to Tamb = 25 °C VGS = 0; VDS = 15 V ID = 200 µA; VDS = 15 V VGS = 0; VDS = 15 V 3 6 11
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