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NXP Semiconductors Electronic Components Datasheet

BF556A Datasheet

N-channel silicon junction field-effect transistors

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DISCRETE SEMICONDUCTORS
DATA SHEET
BF556A; BF556B; BF556C
N-channel silicon junction
field-effect transistors
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Jul 29


NXP Semiconductors Electronic Components Datasheet

BF556A Datasheet

N-channel silicon junction field-effect transistors

No Preview Available !

Philips Semiconductors
N-channel silicon junction
field-effect transistors
Product specification
BF556A; BF556B; BF556C
FEATURES
Low leakage level (typ. 500 fA)
High gain
Low cut-off voltage.
handbook, halfpa2ge
1
APPLICATIONS
Impedance converters in e.g. electret microphones and
infra-red detectors
VHF amplifiers in oscillators and mixers.
Top view
3
g
MAM036
d
s
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a SOT23 package.
PINNING - SOT23
PIN SYMBOL
1s
2d
3g
DESCRIPTION
source
drain
gate‘
Marking codes:
BF556A: M84.
BF556B: M85.
BF556C: M86.
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
VGSoff
IDSS
drain-source voltage (DC)
gate-source cut-off voltage
drain current
BF556A
BF556B
BF556C
Ptot
yfs
total power dissipation
forward transfer admittance
CONDITIONS
ID = 200 µA; VDS = 15 V
VGS = 0; VDS = 15 V
up to Tamb = 25 °C
VGS = 0; VDS = 15 V
MIN.
0.5
MAX.
±30
7.5
UNIT
V
V
3 7 mA
6 13 mA
11 18 mA
250 mW
4.5
mS
1996 Jul 29
2


Part Number BF556A
Description N-channel silicon junction field-effect transistors
Maker NXP
PDF Download

BF556A Datasheet PDF






Similar Datasheet

1 BF556A N-channel silicon junction field-effect transistors
NXP
2 BF556B N-channel silicon junction field-effect transistors
NXP
3 BF556C N-channel silicon junction field-effect transistors
NXP





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