BF556A Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors Features - Low leakage level (typ. 500 fA) - High gain - Low cut-off voltage. BF556A; BF556B; BF556C handbook, halfpage 2 1 g d s APPLICATIONS - Impedance converters in e.g. electret microphones and infra-red detectors - VHF amplifiers in oscillators and mixers. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. PINNING - SOT23 PIN...