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NXP Semiconductors Electronic Components Datasheet

BFG520W Datasheet

NPN 9 GHz wideband transistors

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D123
BFG520W; BFG520W/X
NPN 9 GHz wideband transistors
Product specification
Supersedes data of August 1995
1998 Oct 02


NXP Semiconductors Electronic Components Datasheet

BFG520W Datasheet

NPN 9 GHz wideband transistors

No Preview Available !

Philips Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG520W; BFG520W/X
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.
APPLICATIONS
RF front end wideband applications in the GHz range,
such as analog and digital cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT, etc.), radar detectors,
pagers, satellite television tuners (SATV) and repeater
amplifiers in fibre-optic systems.
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT343N plastic package.
MARKING
TYPE NUMBER
BFG520W
BFG520W/X
CODE
N3
N4
PINNING
PIN
1
2
3
4
DESCRIPTION
BFG250W
BFG250W/X
collector
base
emitter
emitter
collector
emitter
base
emitter
handbook, halfpage
4
3
1
Top view
2
MBK523
Fig.1 Simplified outline SOT343N.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
VCES
IC
Ptot
hFE
Cre
fT
GUM
|S21|2
F
collector-base voltage open emitter
collector-emitter voltage RBE = 0
collector current (DC)
total power dissipation Ts 85 °C
DC current gain
IC = 20 mA; VCE = 6 V
60
feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C
maximum unilateral
power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C
insertion power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C 16
noise figure
Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 900 MHz
20
15
70
500
120 250
0.35
9
17
V
V
mA
mW
pF
GHz
dB
17
dB
1.1 1.6 dB
1998 Oct 02
2


Part Number BFG520W
Description NPN 9 GHz wideband transistors
Maker NXP
Total Page 16 Pages
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